The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

Abstract

GaAs epitaxial layers have been grown on (001) 6† off-oriented toward (110) Ge substrates by metalorganic vapor phase epitaxy. In order to study the influence of V/III ratio on the growth mechanisms and the structural properties of the layers, the input flow of arsine was changed over a wide range of values, while keeping constant all other experimental settings. Optical microscopy in the Nomarski contrast mode, x-ray topography and high resolution diffractometry, transmission electron microscopy and Rutherford backscattering have been used to investigate the epilayers. It has been found that the growth rate increases and the surface morphology worsens with increasing V/III ratio. The abruptness of the layer-substrate interface has also been found to strongly depend on the V/III ratio, the best results being obtained under Ga-rich conditions. The main structural defects within the layers are stacking faults and misfit dislocations. Layers grown under As-rich conditions only contain stacking faults, probably originated by a growth island coalescence mechanism, whereas layers grown under Ga-rich conditions contain both misfit dislocations and stacking faults generated by dissociation of threading segments of interfacial dislocations. In spite of the different defects, the strain relaxation has been found to follow the same trend irrespective of the V/III ratio. Finally, the relaxation has been found to start at a thickness exceeding the theoretical critical value.