Abstract
GaAs/Ge heterostructures were grown by metal-organic vapour phase epitaxy with different V/III flow ratios; the layer thickness was always much larger than the critical threshold for the elastic strain relaxation. The structural properties of the specimens were investigated by both X-ray topography and high-resolution X-ray diffractometry. It has been found that, at high V/III ratios, the layers are affected by a high density of stacking faults, whereas misfit dislocations are completely absent; the fault density decreases on decreasing the V/III value. A small, but significant strain relaxation has also been observed, thus demonstrating the effectiveness of the partial dislocations bordering the faults in relaxing the strain. At lower V/III ratios the dominant defects are the misfit dislocations to which the strain relaxation can be attributed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
