The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

Abstract

Graphene-based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> . Such a large number is likely due to the realization of an ultraclean interface with virtually no interface trapped charge. However, it is indeed technologically relevant to know the impact that the interface trapped charges might have on the barristor's electrical properties. We have developed a physics-based model of the gate tunable GS heterostructure where nonidealities, such as Fermi level pinning and a “bias-dependent barrier lowering effect” have been considered. Using the model, we have made a comprehensive study of the barristor's expected digital performance.