Abstract
The luminescence peak energy and tunneling lifetime of an exciton in a semiconductor quantum well with a small valence band offset in the presence of a perpendicular electric field is calculated by generalizing the variational approach of quantum confined Stark effect normally used for systems of GaAs/AlGaAs quantum wells. At a finite electric field, the electron-hole Coulomb interaction provides additional confinement to each of the carriers and significantly enhances the Stark shift and the exciton lifetime against field ionization. Numerical results are presented for ZnSe/Zn 1−xMn xSe heterostructures studies in recent experiments.
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