Abstract
The use of secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) have been critical in the development of very large scale integrated circuits because of their shared ability of determining the distribution of elements in a small localized areas as well as good sensitivity for many of the common do pants used in semiconductor technology. This review paper will discuss the uses of both SIMS and RBS in contributing towards the development of advanced metallization technology.
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