Abstract
A method for surface preparation of 6HSiC with different plasma sources (oxygen, and nitreous oxide) to reduce defects in deposited gate oxides is presented. CV- (Capacitance-Voltage) measurements prove that by suitable processing defect densities can be reduced by one order of magnitude down in the range of 10 11 cm −2. In contrast to silicon nitrogen disturbs the deposition of oxides on SiC. By AES (Auger Electron Spectroscopy) measurements the different behavior of nitrogen at the SiO 2 SiC interface compared to the SiO 2 Si interface is analyzed.
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