Abstract
Zinc oxide (ZnO) films are grown by two methods-pulse laser deposition (PLD) and radio-frequency magnetron sputtering at various oxygen ambiences. Based on x-ray diffraction spectra and photoluminescence (PL) spectra, effects of the oxygen ambient on the grain size and emission properties of the ZnO films are investigated. For the samples grown by PLD, the PL spectrum consists of a single ultraviolet (UV) peak except one sample deposited at a low O2 pressure of 7 Pa. All the samples grown by sputtering have both a UV peak and a green emission. The disappearance of the green emission of the PLD samples is ascribed to deficiency of oxygen vacancies (Ov), and the green emission of the sample grown by sputtering is due to abundant Ov. The intensity change of the UV emission is due to the variation of exciton emission, which is related to grain size and stoichiometry. The position shifting of the UV peak of the PLD samples originates from the Zn interstitial-related degradation of stoichiometry.
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