Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have investigated the effects of biased and unbiased X-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of 130-nm MOSFETs irradiated up to <formula formulatype="inline"><tex Notation="TeX">$1~{\rm Mrad}({\rm SiO}_{2})$</tex></formula>. We found a small but measurable increase in TDDB lifetime after irradiation at the worst-case irradiation bias. The influence of radiation bias on subsequent TDDB is more significant in the PMOSFETs than the NMOSFETs. The increased TDDB lifetime and the irradiation-bias dependence are attributed to the influence of radiation-induced traps on the stressing current during the reliability testing. </para>
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