Abstract
Hydrogen radicals are decisive for the low-temperature growth and carbon doping of In0.53Ga0.47As in LP-MOVPE. This is demonstrated for the growth of highly p-type doped In0.53Ga0.47As layers with CCl4 as dopant source. Perturbed angular correlation measurements (PAC) were used to investigate the passivation of acceptors by hydrogen in low-temperature grown In0.53Ga0.47As. Based on the above analysis an InP-based layer stack is developed which employs low-temperature growth of the base layer, high-temperature growth of the remaining HBT layers, and an in situ post-growth annealing under TMAsN2 ambient.
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