Abstract
A new type of virtual (compliant) substrate based on a superstructural AlGaAs layer (SL) and a layer of protoporous silicon (proto-Si) formed on c-Si was used for the low-temperature MOCVD growth of structurally perfect epitaxial GaAs films. The introduction of SL into the compliant substrate in addition to proto-Si eliminated several negative effects associated with the low-temperature growth, diminishing the stress level in the epitaxial layer, protecting this layer from autodoping with silicon atoms, reducing the number of technical procedures associated with the growth of the intermediate buffer layer, improving the structural and morphological properties of the epitaxial layer, as well as providing good optical characteristics. This study contributes to the understanding of the fundamentals of physics and technology of the integrated (III-V)/Si heterostructures by developing their potential for application in optoelectronic devices.
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