Abstract
The role of electron wave modes in semiconductor optical devices is discussed, focusing on quantum wire and box lasers. First, we show fabrication technologies which we have recently developed by using a selective MOCVD growth technique for quantum wires and boxes. Next, lasing characteristics of the quantum wire and box lasers are discussed including extremely low threshold current, enhanced modulation bandwidth, and narrow spectral linewidth. Effects of the size fluctuation and the nonlinear gain on lasing characteristics are also discussed. Finally we discuss importance to control both electron wave mode and optical wave mode for future high performance lasers, which leads to the concept of quantum micro-lasers. To demonstrate this importance, we show an experimental result on enhancement and inhibition effects of the spontaneous emission mode in a vertical cavity lasers with two kinds of quantum wells.
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