Abstract
Lasing operation of a GaInAsP/InP single-quantum-well laser with very narrow (0.12 μm) wire-likeactive region was obtained for the first time under CW condition at 77 K. It was fabricated by a two-step organometallic vapour phase epitaxy (OMVPE) and wet chemical etching process. The threshold current density of the laser was 810 A/cm2. This lasing operation with such a narrow active region indicates that the technique employed here would be suitable for realising a higher-dimensional quantum-well laser, such as quantum wire and box lasers.
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