Abstract
Doping is a fundamental process employed to modify the intrinsic properties of semiconductor materials, making them adaptable for a diverse array of technological applications. By introducing specific impurities into the semiconductor crystal lattice, parameters such as electrical conductivity, bandgap energy, and carrier concentration can be precisely engineered. This paper investigates the effects of various doping methods and elements on semiconductor performance, with a particular focus on their influence in devices like transistors, diodes, and solar cells. The analysis emphasizes how doping alters the optical and electrical properties of semiconductor materials, thereby enhancing their functionality in optoelectronic and advanced electronic applications. Through this study, the critical role of doping in driving the progress of semiconductor technology is underscored, highlighting its importance for the future advancement of electronic devices.
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