Abstract
Nanowire (NW) structures offer a model system for investigating material and scaling properties of phase change random access memory (PCRAM) at the nanometer scale. Here, we investigate the relationship between nanowire device contact resistance and reset current (Ireset) for varying diameters of NWs. Because the reset switching current directly affects possible device density of PCRAM NWs, it is considered one of the most important parameters for PCRAM. We found that the reset switching current, Ireset, was inversely proportional to the contact resistance of PCRAM NW devices decreasing as NW diameter was reduced from 250 nm to 20 nm. Our observations suggest that the reduction of power consumption of PCRAM in the sub-lithographic regime can be achieved by lowering the contact resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.