Abstract
The influence of background concentration on threshold voltage and other small signal parameters is studied theoretically. It is shown that varying the background concentration (unintentional) in the GaInAs channel significantly affects the threshold voltage, the channel charge density, the drain current and other small signal parameters. Varying the background concentration from ∼10 14 to ∼10 16 cm −3, a shift in the threshold voltage of 54 and 87 mV was obtained for 250 and 350 Å channel thickness. The role of background concentration is diminished for increasing channel thickness. The threshold voltage shift is approximately insensitive to a higher indium content in the GaInAs channel.
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