Abstract
The effect of γ-ray exposure on the metal–insulator–semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with 60Co γ-ray source. The energy distribution of interface states was determined from the forward bias I– V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that γ-ray irradiation have a significant effect on electrical characteristics of MIS structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have