Abstract
The effect of γ-ray exposure on the metal–insulator–semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with 60Co γ-ray source. The energy distribution of interface states was determined from the forward bias I– V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that γ-ray irradiation have a significant effect on electrical characteristics of MIS structures.
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