Abstract
This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.
Highlights
The developments in the materials and power devices in silicon carbide (SiC) during the last two decades have led to the use of SiC devices in power electronics in a more efficient and cost-effective manner [1,2,3]
We have summarized the previous work published by our group in regards to the reliability of SiC MOSFETs and have added some new data as appropriate
This advantage grows to approximately 7% roundtrip efficiency in battery electric vehicles (BEV) [9], which is the reason for the mass adaption of SiC power MOSFETs and Schottky barrier diode (SBD) in BEVs
Summary
Since commercial SiC MOSFETS are readily available in the market from different Since commercial SiC MOSFETS are readily available in the market from different vendors, it is convenient to study the reliability and ruggedness of these devices. It is convenient to study the reliability and ruggedness of these devices. Following sections, test results on commercially available devices are presented
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