Abstract
The reverse current of surface barrier counters made of high-resistivity n-silicon was analysed. It was compared with theoretical calculations using measured values for the specific resistivity and the effective lifetime. It is shown that the reverse current of carefully fabricated metal-semiconductor diodes at voltages above about 5 V has mainly two components: the diffusion and the generation current. The condition of the surface is of extreme importance even in the case when surface currents are negligible. The influence of the surface current is discussed. The diffusion current is dependent on the thickness of the undepleted material of the base of the diode and to some extent on the condition of the back contact.
Published Version
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