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Abstract
We report on the improvement of the electronic characteristics of mono-layered graphene field-effect transistors by an interacting capping layer of a suitable fluoropolymer. Favorable shifts in the Dirac voltage toward zero with shift magnitudes in excess of 60 V are observed. Furthermore, the field-effect mobility is increased and the on-off current ratio is improved by up to a factor of 2. The residual carrier concentration is reduced to ~ 4.8×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . We hypothesize that this improvement is due to the strongly polar nature of the C-F chemical bond in the fluoropolymer. Significantly, these results have been achieved in graphene grown by wafer-scale chemical vapor deposition process and lift-off transfer.
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