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Abstract
Currently, owing to its remarkable electro-mechanical, thermal, and optical properties, graphene has attracted tremendous attention in the research community as one of the most prominent materials in modern electronic technology. In recent years, the graphene field-effect transistor (G-FET) has exhibited outstanding radio frequency performance and unprecedented sensitivity. Generally, the contact or parasitic resistance significantly influences the different characteristics of a large area G-FET. In this work, we have determined the effect of contact resistance from different characteristics of a G-FET. We have found that contact or parasitic resistance has a meaningful impact on the device’s different characteristics, i.e., transfer characteristics, transconductance, cut-off frequency, etc. The analytical results have indicated that the transconductance and cut-off frequency of a G-FET decrease significantly with a higher value of contact resistance. Thereafter, reducing contact resistance according to experimental conditions will predict revolutionary changes in fabrication technology for graphene-based devices.
Highlights
INTRODUCTIONScitation.org/journal/adv applications in electronic devices. Generally, the graphene field-effect transistor (G-FET) is a typical FET device where a graphene channel is inserted between the drain and the source
In recent decades, the transistor’s size has been decreased from the micrometer to the nanometer scale according to the consequences of the famous Moor’s law.1,2 with the enhancement of the consumers of advanced electronic devices, the limitation of the silicon-based transistors’ dimension has encountered immense challenges, and physical limits will exist in the long run
A larger value of contact resistance will degrade the performance of the graphene field-effect transistor (G-FET)
Summary
Scitation.org/journal/adv applications in electronic devices. Generally, the G-FET is a typical FET device where a graphene channel is inserted between the drain and the source. The G-FET is a typical FET device where a graphene channel is inserted between the drain and the source. Top-gated G-FETs with a mobility of 6000–7000 cm V−1 s−1 have been developed by optimizing the high-k dielectric material where G-FETs’ mobility is higher than that of conventional Si-based FET devices.. In real G-FET devices, the graphene channel will generally be in contact with the drain and source contacts. There always exists a difference in the density of modes between the interface of the 2D channel material and the 3D metal contact.. There always exists a difference in the density of modes between the interface of the 2D channel material and the 3D metal contact.23 These dissimilarities constitute a parasitic resistance at that interface, which is impartial to the feature of growth. It is expected that this work will insist researchers on utilizing G-FETs in multi-dimensional applications
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