Abstract
Studies of electrical transients in single-crystal silicon induced by discrete low-energy(sub-20 keV) ions have been carried out at 90 K, with ionization measurements and damageaccumulation in the sample being investigated. Ionization studies reveal a discrepancybetween experimental results and predictions from the widely used SRIM (stopping andrange of ions in matter) code, one which increases with decreasing energy: a result whichhas previously been suggested from studies with continuous ion beams. Damageaccumulation studies of the sample also demonstrate that current models of damagebuild-up in silicon are inadequate at such low energies, with experiments indicatingthat individual ions create a much larger region of decreased charge collectionefficiency outside of the small amorphous cores known to be formed by such impacts.
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