Abstract
Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.
Highlights
There has been a recent rapid increase in the field of nanotechnology, in memory storage devices [1]
Three peaks were observed in the graphene oxide (GO) spectrum and labeled as D band at ~1329 cm-1, G band at ~1570 cm-1, and 2D band at ~2656 cm-1 [8, 9]
The D band is attributed to defects and disturbances in the hexagonal graphite layers, which is characteristic of the inplane stretching motion of sp2 carbon atoms [10]
Summary
There has been a recent rapid increase in the field of nanotechnology, in memory storage devices [1]. Resistive random access memory (RRAM) is one candidate for next-generation information storage due to its high speed, long retention time with low power consumption, and simple structure [2, 3] Different materials such as organics, inorganics, transition metal dichalcogenides, metal-organic frameworks, and hybrid materials [4,5,6,7,8,9,10,11,12] have been utilized in RRAM devices to demonstrate their potential applications in data storage. Chitosan is sold as a white powder that can be dissolved in dilute organic acids, such as acetic, lactic, hydrochloric, formic, or succinic acid [15] It is a poor conductor so it is necessary to add a conductive filler in data storage applications [16]. The relationship between J versus E is given by Resistance (Ω) Cumulative probability (%) Operating voltage (V) LRS HRS
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
