Abstract
SiGe/Si HBT is a novel Si based device, compared with traditional BJT, SiGe/Si HBT has some advantages including high current gain, excellent frequency property and lower noise, energy band engineering and doping engineering introduced bring design freedoms. The fabricating basic process flow of SiGe/Si HBT is described, SiGe material epitaxial process, emitter mesa etching process, N type doping poly silicon and metal silicide fabricating process are studied, and the critical process control method are explored in the paper. The SiGe/Si NPN HBT of maximum current gain β=80 is fabricated by this process flow.
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