Abstract
In this work, the effect of the temperature and the humidity on the indirectly-heated type microwave power sensor is researched in order to extend its application field, and their mechanism is revealed. The fabrication of this microwave power sensor is divided into a front side and a back side processing using GaAs MMIC process and MEMS technology. One advantage of this microwave power sensor consists in compatibility with MMIC devices and other planar connecting circuits structures with zero dc power consumption. The measurement results show that the environment temperature has a significant effect on the performance of the indirectly-heated type microwave power sensor, and the humidity has a little effect on its performance. The temperature dependent coefficient is about 0.6 mV/(W K), which has an important reference value to other thermoelectric microwave power sensor. The reason is that the accuracy microwave power measurement will be realized as long as the environment temperature is tracked in the testing process.
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