Abstract
The effect of temperature on thermoelectric microwave power sensors is researched in order to extend its application field. The fabrication of this microwave power sensor is divided into a front side and a back side processing using GaAs MMIC process and MEMS technology. The measurement results show that the temperature has a significant effect on the performance of thermoelectric microwave power sensors. The obtained temperature coefficient is about 0.488 mV/(W · K), which has an important reference value for the thermoelectric microwave power sensors. The reason is that the accuracy of microwave power measurement will be realised as long as the environment temperature is tracked.
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