Abstract
The cross sections of bonding have been made by using focus ion beam(FIB) system on the advanced chips packaged with BGA. Through the measurement of aluminum layer thickness under different bond force, the bonding reliability has been evaluated. The comparison has also been made on the interface of Au wire Bonding and Cu wire Bonding. Since the Cu wire Bonding process is more difficult, When it is used in the advanced chips, the bonding reliability should be evaluated.
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