Abstract
In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In0.82Ga0.18As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In0.82Ga0.18As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.
Highlights
In this work, we propose a formation mechanism to explain the relationship between the surface morphology and dislocations in the In0.82Ga0.18As/InP heterostructure
We focused on the formation mechanism to explain the relationship between the surface morphology and dislocations of In0.82Ga0.18As/InP heterostructure
Our observations demonstrate that the surface morphology became smooth as the preparation temperature was descread
Summary
We propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The methods used to prepare semiconductor films strongly influence their dislocation density and photoelectric properties, various epitaxial growth technologies such as MBE12,13, SPE14, PVD15 have been explored t in recent years to obtain high performance semiconductor thin films. Among these main thin-film preparation method, metalorganic chemical vapor deposition (MOCVD) has been widely used in the preparation of InxGa1−xAs materials since 196816–18. We focused on the formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations of In0.82Ga0.18As/InP heterostructure.
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