The relationship between hydrogen and electronic defects in amorphous silicon

Abstract

Two important models for understanding of amorphous silicon are the defect pool model and the hydrogen density of states. The defect pool model explains the electronic density of states and has significantly improved the understanding and modelling of amorphous silicon devices. The hydrogen density of states has been useful to understand hydrogen diffusion, hydrogenation—dehydrogenation experiments and optimal growth conditions. Previously these models were separate and inconsistent with each other. A single model has been developed which encompasses both of these models, and can be used to explain a large number of phenomena in a unified and consistent manner. Here the central concepts underlying the model are explained, and some examples are given of the wide variety of data which it fits.