Abstract
The Mn4N(200) films were grown on MgO(100) substrates by molecular beam epitaxy. The saturated magnetizations are 0.735 μB/f.u. and 0.892 μB/f.u. under pressure of 7.5 × 10−6 mbar–9.5 × 10−6 mbar. Increasing of growth pressure enhances the magnetism of Mn4N due to the reduction of nitrogen vacancies. Debye temperature (TD) of Mn4N is estimated to be 86 K. The longitudinal resistivity is linear to T1.9994 when T < TD, which coincides with electron-electron scattering of ferromagnetic coupling. The longitudinal resistivity originates from electron-electron scattering below TD since electron-phonon scattering is frozen. The longitudinal resistivity at 0 K is about 10% lower than 5 K as 7.085 μΩ cm. Mn4N films show obvious anomalous Hall Effect in perpendicular magnetic fields. The anomalous Hall resistivity (ρAH) of Mn4N film is obtained by subtracting the ordinary Hall resistivity from transverse resistivity. The ρAH is verified to be linear to magnetization at low magnetic field strength region (0–9 KOe).
Published Version
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