Abstract
We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.
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