Abstract
We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.
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