Abstract
We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show four peaks originating from different monolayer terraces. These peaks exhibit a doublet splitting. We assigned this doublet to free excitons and excitons bound to neutral donors from the strong well width dependence of doublet splitting.
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