Abstract
The authors report a study of optical properties of lattice matched (x=0.53) and strained (x=0.60) In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.48/As single quantum wells, grown by molecular beam epitaxy (MBE). A set of optical spectroscopy techniques, namely, photoluminescence (PL), photoconductivity (PC), photoreflectance (PR), and photoluminescence excitation (PLE), have been used. By means of low-temperature PC measurements, the role of strain in introducing some defects is analyzed. The conduction band discontinuity at 300 K and 5 K is determined with data of PR and PLE measurements as a function of x. Results have shown the increase of Delta E/sub c/ values with the increase of indium concentration in the InGaAs quantum well. >
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