Abstract
The authors report a study of optical properties of lattice matched (x=0.53) and strained (x=0.60) In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.48/As single quantum wells, grown by molecular beam epitaxy (MBE). A set of optical spectroscopy techniques, namely, photoluminescence (PL), photoconductivity (PC), photoreflectance (PR), and photoluminescence excitation (PLE), have been used. By means of low-temperature PC measurements, the role of strain in introducing some defects is analyzed. The conduction band discontinuity at 300 K and 5 K is determined with data of PR and PLE measurements as a function of x. Results have shown the increase of Delta E/sub c/ values with the increase of indium concentration in the InGaAs quantum well. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.