Abstract
The reduction of iodine at the GaAs electrode has been re-examined. Impedance measurements have shown that the bandedges of GaAs in iodine solutions are shifted downwards with respect to their position in an indifferent electrolyte. This displacement is caused by the chemical reaction of the GaAs surface with iodine. As a result, the distribution function of iodine shows an overlap with the conduction band of GaAs, and reduction takes place by electron capture. When sufficient conduction band electrons are available at the surface, then a redistribution of potential between the space charge and Helmholtz layer occurs, and the bandedges shift back to their original position. The iodine distribution function now overlaps with the valence band, and iodine is reduced by hole injection. This was confirmed by electroluminescence and impedance measurements.
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