The Rectification Studies on the P+-Ion Implanted C60/Si Films

Abstract

Abstract N-type doping of the C60 films deposited on Si substrates has been achieved by 80 keV P+-ion implantation with doses of 2×1014 cm−2 at room temperature. The heterostructures composed of the n-type doped C60 films and n- or p-type Si(111), Si(100) substrates are studied in view of semiconductor heterojunctions. The rectification and other electrical characteristics of the P+-ion implanted n-C60/n-(p-)Si heterostructures are disclosed by the current-voltage (I-V) measurements at room temperature. The n-C60/p-Si heterostructures show stronger rectification than n-C60/n-Si heterostructures and Si(111) substrates are found to be more suitable for forming n-C60/Si heterostructures than Si(100) substrates.