Abstract
We have investigated the crystallization process of an amorphous Si layer grown on a clean and hydrogen-terminated Si(0 0 1) surfaces by ion beam induced epitaxial crystallization (IBIEC). It is widely known that the amorphous/crystalline (a/c) interface should be atomically controlled to achieve the high-quality Si epitaxy. In this study, we quantitatively clarify the influence of interfacial H amount to the IBIEC rate of the deposited amorphous Si layer. We initially prepared a typical H-free pristine Si(0 0 1)-(2 × 1) surface and two kinds of chemically H-terminated surfaces of as-treated and sequentially annealed at 350 °C in ultrahigh vacuum, corresponding to high (dihydride) and low (monohydride) hydrogen coverage, respectively. An amorphous Si layer was then in-situ deposited on these three types of surfaces by an electron bombardment evaporator at room temperature. The samples were irradiated by 180-keV Ar+ ions with an ion fluence of 5 × 1015 ions cm−2 at 300–500 °C. The Rutherford backscattering (RBS) analysis showed that the deposited Si on the dihydride surface is not crystallized at these temperatures; whereas, that on the monohydride surface is crystallized by Ar+ irradiation at 500 °C. The crystallization on the MH surface was found at significantly higher temperature than that on the H-free clean surface. The behavior of the interfacial H atoms during IBIEC process is discussed by means of RBS analysis.
Published Version
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