Abstract
The article considers a new architecture of the BiJFet differential difference operational amplifier (DDA) on the base of single-ended differential stages, providing small values of systematic component of the offset voltage (V os ) in conditions of radiation and low-temperature degradation of current gains of the bipolar transistor base (β). The main equations are obtained, which allow formulating the requirements to the functional nodes of DDA — current mirrors and an output buffer amplifier, at which the effect cancellation P of the applied transistors is provided. The results of the computer simulation of BiJFet-DDA in the range of temperature −140 ° ÷ +100° and neutron flux up to 5.1013 n/cm2 are given. They show that its magnitude V os is not bigger than unities of /V.
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