Abstract

Ion implantation is frequently used method for the simulation of material damage caused by its exposure to harsh environments. The induced material damage and impurities accumulation will exhibit strong depth dependency in the case of its exposure to charged particles due to particle energy losses mechanisms. In presented study, we have performed an ion implantation of 4 MeV C3+ ions with three different fluences (1.5, 5 and 10 × 1015 cm−2) in the MgO [100] crystal in order to simulate structural damage induced by energetic particles. The damage depth profiles have been obtained by Elastic Backscattering Spectrometry in channeling orientation (EBS/C) using 1.86 MeV protons. EBS/C spectra were analyzed with the in house developed phenomenological Channeling SIMulation (CSIM) code. In addition to the damage depth profiles, with the new upgraded version of CSIM, concentration depth profile of implanted atoms (impurities) have also been determined. EBS/C spectra obtained profiles have been compared with the results of depth-resolved (micro) Photoluminescence spectroscopy (μPL) of the implanted MgO crystal cross-section. EBS/C and μPL obtained profiles for all investigated samples show very good consistency. This opens up the possibility for usage of EBS/C method in material analysis of lighter than bulk impurity concentration profiling.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.