Abstract
We propose a pushing gate for entangling two ions in a planar Coulomb crystal in the view of realizing large-scale quantum simulations. A tightly focused laser is irradiated from the direction perpendicular to the crystal plane and its spatial intensity profile generates a state-dependent force. We analyze the error sources in this scheme and obtain low infidelity.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
