The properties of ZnSc layers grown on GaAs and Si substrates by atomic layer epitaxy

Abstract

ZnSe layers have been grown by atomic layer epitaxy using metal organic vapor-phase deposition system on to (100) GaAs and (100) Si substrates. The growth rate per cycle is strongly dependent on the substrate temperature. The self-limiting growth of one monolayer per cycle is obtained in the wide substrate temperature range of 100–200°C for GaAs substrates and 150–250°C for Si substrates. The X-ray patterns are similar on both substrates. The surface morphologies are smooth and mirror-like. The photoluminescence spectra show an emission at 443 nm at 77 K on both substates.