Atomic layer epitaxy of Si using atomic H

Abstract

Atomic H is proposed for the reducer gas in the atomic layer epitaxy (ALE) of Si. Its high reactivity makes it possible to remove surface-terminating adsorbates, which cause the self-limitation of unwanted successive deposition of Si compounds, at low temperature. The ALE growth was attempted by the alternating exposure of the Si(111) substrate to SiH 2Cl 2 and H. Ideal monolayer growth was obtained and the growth rate was independent of the gas volumes and the substrate temperature. The lower ALE limit of the substrate temperature was 540 °C, about 250 °C lower than the case of H 2 as the reducer gas.