The Properties of Shuffle Screw Dislocations in Semiconductors Silicon and Germanium

Huili Zhang,Chunhua Zeng,Chun Zhang,Lumei Tong

doi:10.2174/1874088x01509010010

Abstract

The dislocation widths, Peierls barriers and Peierls stresses for shuffle screw dislocations in diamond structure crystals, Si and Ge, have been calculated by the improved P-N theory. The widths are about 0.6b, where b is the Burgers vector. The Peierls barrier for shuffle screw dislocation in Si and Ge, is about 3.61~4.61meV/Å and 5.31~13.32meV/Å, respectively. The Peierls stress is about 0.28~0.33GPa and 0.31~0.53GPa, respectively. The calculated Peierls barriers and stresses are likely the results of shuffle screw dislocation with metastable core which is centered on the bond between two atoms.

Highlights

The mechanical properties of Si and Ge have been widely investigated due to their importance in the electronic industry
The dislocations in diamond structure crystals Si and Ge can be present in the glide set or shuffle set configurations and the glide dislocation will dissociate into a pair of partial dislocations separated by an intrinsic stacking fault [1]
Rabier and Demenet have showed that high external pressures on Si favor a pure shuffle dislocation popular over the partialized glide dislocation [2]

Summary

INTRODUCTION

The mechanical properties of Si and Ge have been widely investigated due to their importance in the electronic industry. The core structure, Peierls barrier and Peierls stress for shuffle screw dislocations in Si and Ge have been studied by the improved P-N theory. An overview of this paper is as follows: Sec 1, Introduction; Sec 2, Dislocation equation, core structure, Peierls barrier and Peierls stress; Sec 3 is the result and discussion. Substituting the solution Eq(4) into dislocation equation and after complicated calculations, an algebraic equation about parameter c can be obtained as follows: 2βμ (1 + 2 c)(1 − c). Substituting the solution Eq(4) into dislocation equation and after complicated calculations, an algebraic equation about parameter c can be obtained as follows: 2βμ (1 + 2 c)(1 − c)2 It recovers the classical P-N model when the discrete parameter β equals to zero. In the classical P-N theory, the Peierls barrier and stress are obtained by calculating misfit energy only.

AND DISCUSSION

CONCLUSION