Abstract
RF stimulated DC discharge mode was developed and used in plasma anodization. Equipment operating in this mode has been set up for anodizing semiconductor materials. To improve the feature of this equipment, enhanced electrode was induced. Anodized oxide film of silicon was applied as gate oxide film in MOSFETs on SOI structure. This paper describes this discharge mode and enhanced electrode and give the properties of the oxide film and MOSFETs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
