Abstract
A gate silicon oxide film breakdown experiment is attempted by SHE (substrate hot electron) injection in the n-channel MOSFET with 6-nm gate oxide film, where the reverse bias voltage is impressed on the silicon substrate to inject the high-energy electron into the gate electrode side. Examining the difference from the QBD value (cumulative charge density until breakdown) in the F-N (Fowler-Nordheim) injection, the following points are revealed. The high-energy electron injected from the silicon substrate side breaks the valence bond in the gate oxide film, and, forming a chain, the breakdown of the oxide film occurs by short-circuiting the substrate and the gate electrode. This differs from the models reported in the past, such as the hole injection from the anode or the nonuniformity of the oxide film. It is also see that the oxide film breakdown by this injection mechanism is a local breakdown, with the diameter of breakdown 10 to 30 nm. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(8): 11–19, 1997
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronics and Communications in Japan (Part II: Electronics)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
