Abstract

In this work, metal-semiconductor photodiodes with organic interlayers were produced, and their electrical properties were investigated under different light intensities. CongoRed was used as interlayer and grown as a thin film using spin coating technique on p-type silicon substrates cleaned by different chemical methods. The changes in electrical parameters of completed Al/CongoRed/p-Si/Al diodes were investigated under dark and different light intensity. From results obtained, it has been seen that the fabricated devices show photodiode properties, and as a result, they can be employed in opto-electronic applications.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call