The Problem of Doping in II-VI Semiconductors

Abstract

spectrum. In the late 1970's, the application of molecular beam epitaxy and metal organic vapor phase epitaxy to II-VI compounds greatly enhanced the growth of high quality and high purity crystals and stimu­ lated intensive new research into the properties of these materials. However, the problem of doping remained largely unsolved. Success was finally achieved in 1991 when it became possible to make ZnSe p-type and to make the first blue-light emitti ng laser diodes. This success has motiv­ ated intensi ve new research on large gap II-VI and III-V semiconductors. The goal is to develop a better understanding of the fundamental factors affecting doping in these semiconductors.