Abstract
A design principle is proposed for long P+IN+ Ge magneto-diode with a high surface recombination region on one side. The optimal relation is established for design among its lengthl, depthd, widthw and resistivity ρ: (ρ/w)(l/α)8⩽10.75(ΔT)2/(I03R1h/2), where ΔT is the maximum permissible temperature rise of the chip,Rth the thermal resistance of the header,I0 the forward current of the diode.
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