Abstract
Epitaxial layers of the compound semiconductors InSb and InAs 1− x Sb x have been prepared by metal organic chemical vapor deposition in a vertical, atmospheric pressure quartz reactor. Trimethylindium (TMI), trimethylantimony (TMSb) and arsine diluted in H 2 were used as the In, Sb and As sources. A temperature range of 400 to 550°C and molar gas phase flow ratios of TMI to the flow of AsH 3 + TMSb of 0.08 to 1.2 were investigated. For 0.05 < x ⩽ 1.0 the best surface morphologies were obtained for growth rates <0.02 μm/min at 475°C with the molar flow ratios = 1.0. For the ternary, the solid phase composition was found to be controlled by thermodynamics and can be predicted from the input gas phase molar flow rates. However, the growth rate for both the binary and the ternary is thermally activated and is controlled by kinetics.
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