Abstract
InGaAsSb thermophotovoltaic cells and Al(Ga)AsSb cell isolation diodes have been successfully grown by MOCVD. Epitaxial growth of antimonide films is quite sensitive to small changes in growth conditions, but modern MOCVD technology has sufficient control to reproducibly generate antimonide-based devices. In this work, In 0.1Ga 0.9As 0.09Sb 0.91 thermophotovoltaic cells exhibit open circuit voltages of 250 mV with 60% external quantum efficiency. The electrical properties of Al(Ga)AsSb are dominated by background oxygen. Oxygenated contaminates from TESb are the major contributors to this background oxygen concentration. Both Al 0.4Ga 0.6As 0.04Sb 0.96 and AlAs 0.08Sb 0.92 cell isolation diodes have been tested. AlAs 0.08Sb 0.92 cell isolation diodes show a reverse breakdown of 7.9 V at 0.1 A/cm 2. An antimonide-based thermophotovoltaic monolithic interconnected module has been fabricated.
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