Abstract
Radially homogeneous bulk single crystals of GaxIn1−xSb have been grown by the Czochralski technique in the range 0.9 < x < 1. High seed rotation rate and appropriate shaping of the crystal boule are essential for the suppression of interface breakdown phenomena. Electron microprobe analyses of the first to freeze ends of the crystal necks produced by Czochralski pulling reveal effective distribution coefficients close to the corresponding equilibrium distribution coefficients. The etch pit density on (111) A faces of Czochralski pulled GaxIn1−xSb crystals is < 104cm−2. Their electrical properties are similar to those of zone leveled GaxIn1−xSb crystals.
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